[PDF.39eg] Quantitative TEM Study of Nitride Semiconductors: Quantitative transmission electron microscopy study of III-nitride semiconductor nanostructures (Omn.Univ.Europ.)
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Quantitative TEM Study of Nitride Semiconductors: Quantitative transmission electron microscopy study of III-nitride semiconductor nanostructures (Omn.Univ.Europ.)
Maxim Korytov
[PDF.ta75] Quantitative TEM Study of Nitride Semiconductors: Quantitative transmission electron microscopy study of III-nitride semiconductor nanostructures (Omn.Univ.Europ.)
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| #15388975 in Books | 2010-11-12 | Original language:English | PDF # 1 | 8.66 x.45 x5.91l,.65 | File type: PDF | 196 pages|
The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measureme...
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